-
C
-Capacitance or capacitor
CAD -Computer aided design
CAM
-Computer aided manufacture
CATV -Cable TV
CB
-Common base configuration
CB- Citizen's band
CC
-Common collector
CE-Common emitter
cm
–Centimeter
cmil -Circular mil
CPU-
Central processing unit
C (Q)-Coulomb
CR cr
-Junction diode
CRO- Cathode ray Oscilloscope
CRT
-Cathode ray tube
CT -Total
capacitance
cw
-Continuous transmission
E
DC-
or Erms Difference in potential
e
-Instantaneous difference in potential
ECG- Electrocardiogram
ECL
-Emitter coupled logic
EHF- Extremely high frequency
EHV-
Extra high voltage
ELF- Extremely low frequency
EMF-Electromotive
force
EMI-Electromagnetic interference
EW-
Electronic warfare
G-
Gravitational force
G -Conductance
G- Giga
(109 )
JFET-Junction
field effedt transistor
L-
Coil, inductance
LC-
Inductance-capacitance
LCD- Liquid crystal display
L-C-R
-Inductance-capacitance-resistance
LDR-
Light-dependent resistor
LED- Light emitting diode
LF-
Low frequency
LM- Mutual inductance
LNA-
Low noise amplifier
LO -Local oscillator
LSI-
Large scale integration
LT -Total inductance
N
-Number of turns in an inductor
N-Revolutions
per minute
n-Nano (10-9)
N-
Negative
NA- Nanoampere
NC-
Normally closed
NCNo- connection
NEG, neg
–Negative
NF-Nanofarad
nH
-Nanohenry
nm- Nanometer
NO-Normally
open
NPN- Negative-positive-negative
Ns-
Nanosecond
NW- Nanowatt
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OP AMP-
Operational amplifier
R-Potentiometer
R- Resistance
RAM-
Random access memory
RC- Resistance-capacitance, also Radio controlled
Rcvr-Receiver
Rect- Rectifier
Ref-
Reference
Rf- Radio frequencies
RF-Radio
frequencies
RFI-Radio frequency interference
RL-Load
resistor
RLC- Resistance-capacitance-inductance
RMS, rms-
Root mean square
ROM-Read only memory
Rpm-
Revolutions per minute
T-
Tera (1012)
T
-Torque
T -Transformer
t-
Time in seconds
TC- Time constant, also temperature
coefficient
TE-Transverse
electric
Temp-TemperatureTHz-Terahertz
TM-Transverse magnetic
TR-Transmit-receive
TTL-Transistor-transistor logic
TWT-Travelling wave tube
TV - Television
W
–Watt
XC -Capacitive reactance
XL
-Inductive reactance
Y -Admittance
Z
–Impedance
Zin -Input impedance
Zo
-Output impedance
Zp -Primary impedance
Zs -Secondary
impedance
ZT -Total impedance
B
-Flux density
BCD -Binary coded decimal
bfo
-Beat frequency oscillator
BJT -Bipolar junction transistor
BW-Bandwidth
d-
Deci (10-1)
D/A or D-A-Digital
to analog
DC-Direct current
DIP-Dual
in-line package
DMM -Digital multimeter
DPDT
-Double pole double throw
DTL-Diode transistor logic
DVM-Digital
voltmeter
– Frequency
FET-Field effect transistor
FF-Flip
Flop
fil -Filament
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FM-
Frequncy modulation
fr -Frequency at resonance
fsk
-frequency-shift keying
FSD- Full scale deflection
H-
Henry
H-
Magnetic field intensity
H -Magnetizing flux
h-
hecto (102 )
h -Hybrid
HF-
High frequency
hp -Horsepower
Hz
-Hertz
I
-Current
i
-Instantaneous current
IB -DC Base current
IC -DC
Collector current
IC- Integrated circuit
Ie-
Total
emitter current
Ieff- Effective current
IF-
Intermediate frequency
Imax -Maximum current
Imin
-Minimum
current
I/O- Input/output
IR-
Infrared
IR- Resistor current
IS -Secondary
current
IT -Total current
K-
Coefficient of coupling
k- Kilo (103 )
kHz-
Kilohertz
kV- Kilovolt
kVA-
Kilovoltampere
kW- Kilowatt
kWh-Kilowatt-hour
M-Mega
(106 )
M -Mutual conductance
MI
-Mutual inductance
m- Milli (10-3 )
mA-Milliampere
mag- Magnetron
max
–Maximum
MF- Medium frequency
MH-
Millihenry
MHz -Megahertz
min
–Minimum
mm- Millimeter
mmf
-Magnetomotive force
mW- Milliwatt
MOS
-Metal oxide semiconductor
MOSFET
-Metal oxide semiconductor field effect transistor
MPU-
Microprocessor unit
MSI-
Medium scale integrated circuit
mV
–Millivolt
P-
Pico (10-12)
P-
Power
p- Instantaneous power
P-
Positive, also peak
PA- Public address or power amplifier
PA-
Picoampere
PAL- Programmable Array Logic
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PAM,
pam-
Pulse amplitude modulation
Pap-Apparent power
Pav-Average
power
PCB- Printed circuit board
PCM, pcm-Pulse-code
modulation
PDM-Pulse-duration modulation
PF-Picofarad
PLD-Programmable Logic Device
PLL-Phase
locked loop
PM- Phase modulation, also Permanent magnet
PNP-Positive-negative-positive
POT, pot-Potentiometer
P-P-Peak
to peak
PPM-- Pulse-position modulation
PRF-Pulse
repetition frequency
PRT-Pulse repetition time
Pw-
Pulse width
PWM, pwm- Pulse width modulation
Q-Charge,
also quality
q-Instantaneous charge
SCR-Silicon
controlled rectifier
SHF-Super
high frequency
SIP-Single in-line package
SNR-Signal-to-noise
ratio
SPDT-Single pole double throw
sq cm-
Square centimeter
SSB- Single sideband
SW-Short
wave
SWR-Standing-wave ratio
SYNC, sync-Synchronous
UHF-
Ultra high frequency
UHV-Ultra high voltage
UJT-Unijunction
transistor
UV-Ultraviolet
V-
Vacuum tube
V, v-Volt
v-
Instantaneous voltage
VA- Volt ampere
Vav-Voltage
(average value)
VBE-DC voltage base to emitter
Vc-Capacitive
voltage
VCE-DC voltage collector to emitter
VCO-Voltage
controlled oscillator
VHF-Very high frequency
VIn -Input
voltage
VL- Inductive voltage
VLF-
Very low frequency
Vm, Vmax -Maximum
voltage
VOM-Volt
ohm milliameter
Vout -Output voltage
Vp
-Primary
voltage
VS-Source voltage
VSWR-Voltage
standing wave ratio
VT-Total voltage
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